DocumentCode :
2365052
Title :
Biased voltage boundary condition to operate Bilayer Graphene in the insulating region
Author :
Sadeghi, Hatef ; Ahmadi, M.T. ; Sangtarash, Sara ; Ismail, Razali
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
50
Lastpage :
52
Abstract :
Graphene has received significant attention due to its excellent transport properties. Bilayer Graphene Nanoribbon (BGN), double Bernal stacked honeycomb sheets of carbon which have quadratic dispersion relations instead of single layer Graphene Nanoribbon (GNR) by linear dispersion, provides an interesting area of research activity. In this paper, we show that isolating properties appears in the limit of external applied voltage in BGNs. The gap between conduction and valance band which is opened by an applied electric field is strongly varied by the value of the external voltage. The band gap is opened for Vext = 0 Vextmax to where the conduction and valance band meet each other and overlap through the conduction and valance band. In this boundary condition, BGNs are expected to behave as an insulator. In contrast, beyond this boundary condition it is estimated to be semi-metallic. Also we showed changing the value of interlayer hopping strongly affected the maximum band gap and it creates a wider possible external electric field which opens the band gap in BGNs.
Keywords :
conduction bands; energy gap; graphene; honeycomb structures; hopping conduction; nanostructured materials; valence bands; Bernal stacked honeycomb sheets; C; band gap; biased voltage boundary condition; bilayer graphene nanoribbon; conduction band; interlayer hopping; quadratic dispersion relation; valence band; Atomic layer deposition; Boundary conditions; Carbon; Electric fields; Materials; Photonic band gap; Physics; Band Structure; Bilayer Graphene Nanoribbon (BGN); Electronic Properties;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
Conference_Location :
Kuala Lumpur
ISSN :
2159-2047
Print_ISBN :
978-1-61284-388-9
Type :
conf
DOI :
10.1109/ICEDSA.2011.5959053
Filename :
5959053
Link To Document :
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