Title :
0.8 micron double level metal technology with SOG filled tungsten plug
Author :
Sun, Yu ; Radjy, Nader ; Cagnina, Sal
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
The authors describe a 0.8 μm double level metal technology developed for high density memory applications. A SOG (spin-on-glass) filled tungsten contact plug with barrier metal underneath and aluminum film on the top is proposed. Low contact-1 resistance to n+, p+ and polycide has been achieved. Because of the structure of this contact, a composite film of barrier metal, tungsten and aluminum is formed for the first metal; therefore, this type of contact process requires no tungsten etchback as does the typical tungsten plug. The composite film of metal-1 shows sheet resistance below 0.2 ohm/square. Due to the relatively flat nature of the topography a simple non-etchback SOG intermetal planarization process with sloped contact-2 was adopted for this technology, and the electrical results of metal-2 continuity and bridging tests meet expectations
Keywords :
contact resistance; integrated circuit technology; metallisation; 0.8 micron; Al-W; SOG filled W contact plug; barrier metal; composite film; contact process; double level metal technology; high density memory applications; intermetal planarization process; nonetchback SOG process; polycide; sheet resistance; spin-on-glass; Aluminum; Contacts; Planarization; Plugs; Space technology; Sputter etching; Sputtering; Substrates; Surface topography; Tungsten;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152965
