DocumentCode
2365114
Title
An integrated approach to MOS-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design
Author
Anderson, Samuel ; Balkau, Fritz ; Gürkök, Cahit
Author_Institution
Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA
fYear
1995
fDate
1-3 May 1995
Firstpage
245
Lastpage
252
Abstract
MOS-gated power semiconductors are enabling technologies for “efficient end-use” power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed
Keywords
environmental factors; insulated gate bipolar transistors; power semiconductor devices; semiconductor device manufacture; MOS-gated power semiconductors; carbon dioxide emissions reduction; clean production technologies; energy saving; environmental benefit; semiconductor manufacturing; waste minimization; Carbon dioxide; Electronics industry; Energy consumption; Fossil fuels; Humans; Manufacturing industries; Power generation; Production; Semiconductor device manufacture; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and the Environment, 1995. ISEE., Proceedings of the 1995 IEEE International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
0-7803-2137-5
Type
conf
DOI
10.1109/ISEE.1995.514984
Filename
514984
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