Large signal theory of plasma electronics terahertz detector

We present the results of the numerical simulation of the terahertz detectors based on high electron mobility transistors (HEMTs). Our results show that the dynamic range of these plasma wave electronics devices is determined by the sheet electron concentration in the channel (in agreement with an analytical theory). As the amplitude of the ac signal applied to the detector increases, the detector responsivity decreases. Also, the fundamental plasma frequency decreases somewhat, and additional responsivity peaks appear at subharmonics of the fundamental frequency in high mobility structures. These results are important for the design of plasma electronics detectors of terahertz radiation