Title :
High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm
Author :
Knigge, A. ; Zorn, M. ; Unold, H.J. ; Mederer, F. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; surface emitting lasers; thermal stability; vapour phase epitaxial growth; 650 to 670 nm; GaInP; GaInP MQW oxide-confined VCSELs; MOVPE grown; high frequency behaviour; high-performance vertical-cavity surface-emitting lasers; record output power; temperature stability; Epitaxial growth; Epitaxial layers; Frequency; Power generation; Quantum well devices; Stability; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041092
