DocumentCode
2365199
Title
Design of SCR devices for SiGe BiCMOS applications
Author
Parthasarathy, Srivatsan ; Salcedo, Javier A. ; Hajjar, Jean-Jacques
Author_Institution
Analog Devices, Wilmington, MA, USA
fYear
2011
fDate
9-11 Oct. 2011
Firstpage
235
Lastpage
238
Abstract
An optimum vertical SiGe SCR design is presented for on-chip electrostatic discharge (ESD) protection. The device response to fast transients, emulating ESD CDM-type events, is compared with standard clamp structures having similar footprint-area, loading-capacitance and current handling ability. SCR designs include variation in the device´s anode construction, anode geometry and triggering mechanism.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; thyristors; BiCMOS; ESD; SCR; SiGe; anode construction; anode geometry; on-chip electrostatic discharge protection; optimum vertical silicon controlled rectifiers design; triggering mechanism; Anodes; BiCMOS integrated circuits; Capacitance; Electrostatic discharges; Silicon germanium; Thyristors; Transient analysis; ESD; HBT; RF circuits; Reliability; SiGe bipolar/BiCMOS process technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location
Atlanta, GA
ISSN
1088-9299
Print_ISBN
978-1-61284-165-6
Type
conf
DOI
10.1109/BCTM.2011.6082789
Filename
6082789
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