Characterizing phase switching structures for ESD protection

Author

Liu, Jian ; Zhang, Lijie ; Shi, Zitao ; Wang, Xin ; Lin, Lin ; Wang, Li ; Zhang, Chen ; Wang, Albert ; Cheng, Yuhua ; Huang, Ru ; Zhao, B. ; Zhang, Gary

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA

fYear

2011

fDate

9-11 Oct. 2011

Firstpage

239

Lastpage

242

Abstract

We propose a non-traditional nano phase switching ESD protection mechanism and systematic characterization of a set of prototype nano crossbar phase switching ESD structures. Experimental results using transmission line pulse (TLP) and very-fast TLP (VF-TLP) testing confirm the new ESD protection concept and reveal critical ESD protection properties related to device structures, sizes and material compositions. Sample structures demonstrated very fast response to 100pS ESD transient, extremely low leakage of pA level, varying ESD triggering voltage and robust HBM ESD protection capability of at least 215V/μm². This comprehensive characterization shall lead to design optimization of the new nano crossbar ESD protection structures for advanced ICs.

Keywords

electrostatic discharge; integrated circuit design; integrated circuit technology; integrated circuit testing; ESD transient; ESD triggering voltage; advanced IC design technology; nontraditional nano phase switching ESD protection mechanism; prototype nanocrossbar phase switching ESD structure; robust HBM ESD protection capability; very-fast TLP testing; very-fast transmission line pulse testing; Current measurement; Electrostatic discharges; Materials; Nanoscale devices; Switches; Testing; Tunneling; ESD protection; low leakage; nano crossbar; phase switching; triggering voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE

Conference_Location

Atlanta, GA

ISSN

1088-9299

Print_ISBN

978-1-61284-165-6

Type

conf

DOI

10.1109/BCTM.2011.6082790

Filename

6082790