Title :
Characterizing phase switching structures for ESD protection
Author :
Liu, Jian ; Zhang, Lijie ; Shi, Zitao ; Wang, Xin ; Lin, Lin ; Wang, Li ; Zhang, Chen ; Wang, Albert ; Cheng, Yuhua ; Huang, Ru ; Zhao, B. ; Zhang, Gary
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
Abstract :
We propose a non-traditional nano phase switching ESD protection mechanism and systematic characterization of a set of prototype nano crossbar phase switching ESD structures. Experimental results using transmission line pulse (TLP) and very-fast TLP (VF-TLP) testing confirm the new ESD protection concept and reveal critical ESD protection properties related to device structures, sizes and material compositions. Sample structures demonstrated very fast response to 100pS ESD transient, extremely low leakage of pA level, varying ESD triggering voltage and robust HBM ESD protection capability of at least 215V/μm2. This comprehensive characterization shall lead to design optimization of the new nano crossbar ESD protection structures for advanced ICs.
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit technology; integrated circuit testing; ESD transient; ESD triggering voltage; advanced IC design technology; nontraditional nano phase switching ESD protection mechanism; prototype nanocrossbar phase switching ESD structure; robust HBM ESD protection capability; very-fast TLP testing; very-fast transmission line pulse testing; Current measurement; Electrostatic discharges; Materials; Nanoscale devices; Switches; Testing; Tunneling; ESD protection; low leakage; nano crossbar; phase switching; triggering voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-61284-165-6
DOI :
10.1109/BCTM.2011.6082790
