Title :
Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm
Author :
Arai, Masakazu ; Kondo, Takashi ; Matsutani, Akihiro ; Miyamoto, Tomoyulu ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
we demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 1.0-1.2 μm, exhibiting a record wavelength span of over 100 nm. Also, we present a single-mode fiber data transmission experiment using the multiple wavelength VCSEL array with highly strained GaInAs/GaAs quantum wells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; semiconductor laser arrays; 1.0 to 1.2 micron; GaInAs-GaAs; highly strained GaInAs/GaAs quantum wells; multiple wavelength GaInAs/GaAs MQW VCSEL array; multiple wavelength VCSEL array; record wavelength span; single-mode fiber data transmission experiment; wavelength window; Chemical vapor deposition; Data communication; Gallium arsenide; MOCVD; Optical arrays; Optical surface waves; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041093
