Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm

Author

Arai, Masakazu ; Kondo, Takashi ; Matsutani, Akihiro ; Miyamoto, Tomoyulu ; Koyama, Fumio

Author_Institution

Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2002

fDate

2002

Firstpage

9

Lastpage

10

Abstract

we demonstrate a multiple wavelength GaInAs/GaAs VCSEL array emitting in a new wavelength window of 1.0-1.2 μm, exhibiting a record wavelength span of over 100 nm. Also, we present a single-mode fiber data transmission experiment using the multiple wavelength VCSEL array with highly strained GaInAs/GaAs quantum wells.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; semiconductor laser arrays; 1.0 to 1.2 micron; GaInAs-GaAs; highly strained GaInAs/GaAs quantum wells; multiple wavelength GaInAs/GaAs MQW VCSEL array; multiple wavelength VCSEL array; record wavelength span; single-mode fiber data transmission experiment; wavelength window; Chemical vapor deposition; Data communication; Gallium arsenide; MOCVD; Optical arrays; Optical surface waves; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041093

Filename

1041093