Title :
Vibration mode analysis of RF film bulk acoustic wave resonator using finite element method
Author :
Jae Ho Jung ; Lee, Yong Hyun ; Lee, Jung Hee ; Choi, Hyun Chul
Author_Institution :
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Abstract :
In this paper, the resonant characteristics and modes of the film bulk acoustic wave resonator (FBAR) used in a few of GHz frequency region have been analyzed by its impedance analysis using the finite element method. These characteristics could be calculated from solving an large eigen value problem formulated by using electromechanical wave equations and its boundary conditions. In particular, the spurious characteristics as well as all resonant modes and mode shapes, considering the effects of electrode area variation, was extracted. From this result, the fact was obtained that the optimum ratio of length and thickness at the simplified resonator structure is 20:1 and the minimum ratio is 5:1 to operate fundamental thickness vibration mode. Then, we compared our results with the simulation data obtained by Mason model analysis and the measured data of the zinc oxide (ZnO) film bulk acoustic wave resonator (FBAR)
Keywords :
II-VI semiconductors; acoustic microwave devices; acoustic resonator filters; bulk acoustic wave devices; eigenvalues and eigenfunctions; finite element analysis; piezoelectric semiconductors; piezoelectric thin films; semiconductor thin films; thin film devices; vibrations; zinc compounds; FBAR; RF film bulk acoustic wave resonator; ZnO; boundary conditions; electromechanical wave equations; finite element method; fundamental thickness vibration mode; impedance analysis; large eigenvalue problem; length; minimum ratio; mode shapes; resonant characteristics; resonant modes; thickness; vibration mode analysis; zinc oxide; Acoustic waves; Boundary conditions; Film bulk acoustic resonators; Finite element methods; Impedance; Partial differential equations; Radio frequency; Resonance; Shape; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2001 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-7177-1
DOI :
10.1109/ULTSYM.2001.991852
