Noise behavior of buried channel SiGe HFETs for high speed circuit´s applications

Author

Aguilar, Mauro Enciso ; Rodriguez, Manuel ; Lopez-Bonilla, J.L. ; CROZAT, PAUL ; Hackbarth, Thomas ; Herzog, Joest-Hans ; Aniel, Frederic

Author_Institution

Inst. d´´Electronique Fondamentale, Paris-Sud Univ., Orsay, France

fYear

2005

fDate

7-9 Sept. 2005

Firstpage

419

Lastpage

423

Abstract

Microwave and low frequency noise performance of buried channel SiGe HFETs fabricated on several strain relieved buffer (SRB) are presented. The impact of such SRB on microwave device noise performance is estimated by a proper noise de-embedding technique. The influence of device gate length on high microwave noise parameters is also discussed. High frequency noise properties measured in the 2.5-18 GHz frequency range are simulated means of the small signal equivalent circuit. Good agreement between measurement and modeling is obtained Furthermore, the low frequency noise properties for devices with different gate dimensions are discussed in order to predict further improvements on noise performance when shrinking the gate length below 100 nm.

Keywords

Ge-Si alloys; HEMT integrated circuits; buffer layers; high electron mobility transistors; high-speed integrated circuits; integrated circuit noise; microwave integrated circuits; 2.5 to 18 GHz; SRB; SiGe; buried channel SiGe HFET; device gate length; high frequency noise property; high speed circuit; low frequency noise performance; low frequency noise property; microwave device noise performance; noise de-embedding technique; noise modeling; noise parameters; small signal equivalent circuit; strain relieved buffer; strained silicon; Capacitive sensors; Circuit noise; Frequency measurement; Germanium silicon alloys; HEMTs; Low-frequency noise; MODFETs; Microwave devices; Noise measurement; Silicon germanium; HFET; SiGe; microwave noise; noise modeling; noise parameters; strained silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering, 2005 2nd International Conference on

Print_ISBN

0-7803-9230-2

Type

conf

DOI

10.1109/ICEEE.2005.1529659

Filename

1529659