A novel GaAs MESFET with multi-recessed drift region and partly p-type doped space layer

In this paper, GaAs MESFET with multi-recessed drift region and partly p-type doped space layer (MPS-MESFET) is proposed and DC and RF characteristics are analyzed by 2D numerical simulation. The multi-recesses eliminate the spaces adjacent to gate and stop the depletion region extending towards drain and source. The space layer moves the surface state out of the channel and therefore enhances the saturated drain current. Also by using a partly p-type doped space layer, the GaAs MESFET performance is further improved. As compared with conventional recessed-channel GaAs MESFET (CR-MESFET) structure, the RF simulation results show that the MPS-MESFET structure has a 3 dB gain improvement at 1 GHz. Our results show that maximum oscillation frequency of the proposed structure has increased 8.87% in comparison with the CR-MESFET structure.