DocumentCode
2365346
Title
GaN substrates obtained by nitridation of GaAs
Author
Sánchez-R, Victor M. ; Escobosa, Arturo ; Avendaflo, M. ; Navarro, Gerardo
Author_Institution
Departamento de Ingenieria Electrica, CINVESTAV-IPN, Mexico, Mexico
fYear
2005
fDate
7-9 Sept. 2005
Firstpage
432
Lastpage
434
Abstract
A new substrate for the growth of GaN by MOCVD is presented. Photoluminescence spectra show the bandgap emission and yellow luminescence. The latter can be reduced by optimizing the growth parameters. The optical properties of the films are comparable to those of layers obtained epitaxially on sapphire substrates.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; photoluminescence; substrates; wide band gap semiconductors; GaAs; MOCVD; bandgap emission; growth parameter optimisation; nitridation; optical properties; photoluminescence spectra; yellow luminescence; Epitaxial layers; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Luminescence; MOCVD; Optical films; Photoluminescence; Substrates; Temperature; Gallium Nitride; Nitridation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2005 2nd International Conference on
Print_ISBN
0-7803-9230-2
Type
conf
DOI
10.1109/ICEEE.2005.1529662
Filename
1529662
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