• DocumentCode
    2365367
  • Title

    Silicon ultrasonic horns for thin film accelerated stress testing

  • Author

    Lee, Chung-Hoon ; Lal, Amit

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    867
  • Abstract
    A technique for generating controlled stress on thin films for accelerated stress testing is presented. Silicon-based ultrasonic horn transducers are designed and used to test thin film wires integrated on the transducers. The Webster horn equation was solved using the inverse design method to generate a constant strain area in the horn. A change of 5 Ω (12.5% change) was measured on a gold wire integrated on the horn transducers after a 2 hours cyclic load. Stresses high enough to brake the horn could be generated for fracture study
  • Keywords
    VLSI; electromigration; high-temperature electronics; integrated circuit interconnections; integrated circuit testing; life testing; ultrasonic materials testing; 2 h; Si; Webster horn equation; accelerated stress testing; constant strain area; cyclic load; fracture study; horn transducers; inverse design method; thin film wires; ultrasonic horns; Design methodology; Equations; Life estimation; Semiconductor thin films; Silicon; Stress control; Testing; Transistors; Ultrasonic transducers; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2001 IEEE
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-7177-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2001.991858
  • Filename
    991858