DocumentCode
2365367
Title
Silicon ultrasonic horns for thin film accelerated stress testing
Author
Lee, Chung-Hoon ; Lal, Amit
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
2
fYear
2001
fDate
2001
Firstpage
867
Abstract
A technique for generating controlled stress on thin films for accelerated stress testing is presented. Silicon-based ultrasonic horn transducers are designed and used to test thin film wires integrated on the transducers. The Webster horn equation was solved using the inverse design method to generate a constant strain area in the horn. A change of 5 Ω (12.5% change) was measured on a gold wire integrated on the horn transducers after a 2 hours cyclic load. Stresses high enough to brake the horn could be generated for fracture study
Keywords
VLSI; electromigration; high-temperature electronics; integrated circuit interconnections; integrated circuit testing; life testing; ultrasonic materials testing; 2 h; Si; Webster horn equation; accelerated stress testing; constant strain area; cyclic load; fracture study; horn transducers; inverse design method; thin film wires; ultrasonic horns; Design methodology; Equations; Life estimation; Semiconductor thin films; Silicon; Stress control; Testing; Transistors; Ultrasonic transducers; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2001 IEEE
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-7177-1
Type
conf
DOI
10.1109/ULTSYM.2001.991858
Filename
991858
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