Title :
RECEST: a reverse channel emitter switched thyristor
Author :
Bhalla, Anup ; Chow, T. Paul ; So, K.C.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications
Keywords :
MOS-controlled thyristors; characteristics measurement; current density; power semiconductor switches; semiconductor device models; 550 V; RECEST; high-voltage applications; maximum controllable current density; on-state drop; parasitic thyristor latch-up immunity; reverse channel emitter switched thyristor; thyristor turn-on; Anodes; Cathodes; Connectors; Current density; Electron emission; FETs; MOSFET circuits; Semiconductor device manufacture; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515003
