• DocumentCode
    2365441
  • Title

    Self-organized pattern formation by ion beam erosion

  • Author

    Rauschenbach, B. ; Ziberi, B. ; Frost, F.

  • Author_Institution
    Leibniz-Inst. fur Oberflachenmodifizierung, Leipzig
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    93
  • Lastpage
    97
  • Abstract
    The dot and ripple surface topography emerging on Si, Ge and compound semiconductor surfaces during low-energy (les2000 eV) noble gas ion beam erosion at oblique ion incidence is studied. The results show that there is a much more complex behavior of the surface topography with ion energy, ion fluence, angle of incidence, etc.
  • Keywords
    elemental semiconductors; germanium; ion beam effects; silicon; surface topography; Ge; Si; angle of incidence; compound semiconductor surfaces; gas ion beam erosion; ion energy; ion fluence; oblique ion incidence; ripple surface topography; self-organized pattern formation; Ion beams; Nanoelectronics; Pattern formation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585444
  • Filename
    4585444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365441