Title :
1200 V, 150 A insulated-gate thyristors
Author :
Ajit, J.S. ; Kinzer, D.M.
Author_Institution :
Adv. Product Dev., Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
A insulated-gate thyristor (IGTH) design for achieving high controllable current capability is described. A square-cellular design with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure is-used. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A were obtained
Keywords :
MOS-controlled thyristors; insulated gate bipolar transistors; power semiconductor switches; 1200 V; 150 A; IGTH; MOS-channel modulation; NPN transistor; base region; controllable current capability; double-diffused DMOS process; insulated-gate thyristors; square-cellular design; Art; Insulation; MOSFET circuits; Product development; Rectifiers; Telephony; Testing; Thyristors; Transistors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515005
