Long wavelength GaInNAs(Sb) lasers grown by MBE

Summary form only given. We present new structures utilizing GaNAs barriers and a new quantum well material, GaInNAsSb, to achieve post-annealed, long wavelength optical emission. The structures with N in the barriers reduce the blue-shift of luminescence by suppressing N out-diffusion from the QWs and decreasing carrier confinement between the barriers and QWs. We utilize Sb, both incorporated into the crystal and used as a surfactant, to enable higher indium incorporation. GaNAs or GaNAsSb barriers also reduce the overall strain of the active region because the high indium mole fraction QWs are compressively strained and the GaNAs(Sb) barriers are tensely strained. With GaNAs barriers, we were able to grow a 9 QW GaInNAs sample. This type of multiple QW structure is particularly applicable to high power lasers that require large volumes of gain medium.