Title :
Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 μm lasers
Author :
Tomic, Stanko ; Fehse, R. ; Choulis, S.A. ; O´Reilly, E.P. ; Adam, A.R. ; Sweeney, S.J. ; Andreev, Andrey D. ; Hosea, T.J.C. ; Riechert, H.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
By measuring the spontaneous emission from normally operating ∼1.3 μm GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser theory; laser transitions; quantum well lasers; semiconductor device models; spontaneous emission; 1.3 μm GaInNAs/GaAs-based lasers; 1.3 micron; 130 to 370 K; GaInNAs-GaAs; GaInNs 1.3 μm lasers; current paths; recombination processes; spontaneous emission; Charge carrier density; Current measurement; Electrons; Laser theory; Nitrogen; Quantum well devices; Resonance; Spontaneous emission; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041108
