• DocumentCode
    2365530
  • Title

    A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation

  • Author

    Sweeney, S.J. ; Jin, S.R. ; Fehse, R. ; Adams, A.R. ; Higashi, T. ; Riechert, H. ; Tbijs, P.J.A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    We present the measured temperature dependence of InGaAsP, AlGaInAs, and GaInNAs-based QW lasers and discuss Jth and To in terms of the dominant recombination paths.
  • Keywords
    Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser stability; laser transitions; quantum well lasers; thermal stability; 1.3 μm operation; 1.3 micron; AlGaInAs; GaInNAs; InGaAsP; dominant recombination paths; quantum-well lasers; temperature dependence; thermal stability; Current measurement; Fiber lasers; Laser stability; Optical materials; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature distribution; Thermal stability; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2002. IEEE 18th International
  • Print_ISBN
    0-7803-7598-X
  • Type

    conf

  • DOI
    10.1109/ISLC.2002.1041109
  • Filename
    1041109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365530