DocumentCode :
2365530
Title :
A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation
Author :
Sweeney, S.J. ; Jin, S.R. ; Fehse, R. ; Adams, A.R. ; Higashi, T. ; Riechert, H. ; Tbijs, P.J.A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fYear :
2002
fDate :
2002
Firstpage :
43
Lastpage :
44
Abstract :
We present the measured temperature dependence of InGaAsP, AlGaInAs, and GaInNAs-based QW lasers and discuss Jth and To in terms of the dominant recombination paths.
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser stability; laser transitions; quantum well lasers; thermal stability; 1.3 μm operation; 1.3 micron; AlGaInAs; GaInNAs; InGaAsP; dominant recombination paths; quantum-well lasers; temperature dependence; thermal stability; Current measurement; Fiber lasers; Laser stability; Optical materials; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature distribution; Thermal stability; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
Type :
conf
DOI :
10.1109/ISLC.2002.1041109
Filename :
1041109
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2365530
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