Title :
Interaction between fluorene-based polymers and carbon nanotubes/carbon nanotube field-effect transistors
Author :
Li, Lain-Jong ; Chen, Fuming ; Shi, Yameng ; Zhang, Keke ; Dong, Xiaochen
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
Abstract :
We study the interaction between fluorene-based conjugating polymers and various chiralities of single-walled carbon nanotubes (SWNTs). The fluorene-based polymers are able to selectively wrap the SWNTs with certain chiral angles or diameters (1.02~1.06 nm) depending on their chemical structures. This can be used to selectively extract or enrich certain species of nanotubes. For example, high purity of (7, 5) SWNTs (~79% of the semiconducting ensemble) can be obtained by fluorine-polymer assisted extraction from the narrow-diameter distributed SWNTs produced by the catalyst Co-MCM-41. In addition, we also study the interaction between fluorene-based polymers and SWNT networked field-effect transistors (SNFETs) by location-selective photo-excitation, where we find that the photocurrent generated in SNFETs is controlled by the energy-level alignment at the polymer-electrode interface and the SWNT-polymer interface is suggested to contribute to the dissociation of photo-generated excitons.
Keywords :
carbon nanotubes; catalysts; chirality; conducting polymers; excitons; field effect transistors; interface phenomena; nanoelectronics; nanotube devices; photoconductivity; photodissociation; photoemission; photoexcitation; SWNT-polymer interface; carbon nanotube field-effect transistors; catalyst; chiral angles; energy-level alignment; fluorene-based conjugating polymers; fluorine-polymer assisted extraction; location-selective photo-excitation; photo-generated excitons dissociation; photocurrent generation; polymer-electrode interface; single-walled carbon nanotubes chiralities; CNTFETs; Carbon nanotubes; Nanoelectronics; Polymers;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585451