Title :
3D Simulation of Charge Collection and MNU in Highly-Scaled SRAM Design
Author :
Lin, Liu ; Yuanfu, Zhao ; Suge, Yue
Author_Institution :
Design Dept., Beijing Microelectron. Technol. Inst., Beijing, China
Abstract :
Three-dimensional simulation is used to explore the new charge-collection mechanisms in highly-scaled MOSEFT. The results show the charge collection with the parasitic bipolar conduction can cause an increased SEU sensitivity. Then the problem of multiple-node upset in a 0.18 mum DICE cell is studied .The results show not only the transient floating node and charge lateral diffusion are the key reasons for MNU, and the new charge-collection mechanisms in highly-scaled circuit become another reason.
Keywords :
MOSFET; SRAM chips; bipolar memory circuits; 3D simulation; DICE cell; MOSEFT; SEU sensitivity; SRAM design; charge lateral diffusion; charge-collection mechanisms; multiple-node upset; parasitic bipolar conduction; size 0.18 mum; transient floating node; Argon; Circuit simulation; Latches; MOS devices; MOSFET circuits; Microelectronics; Radiation hardening; Random access memory; Resistors; Voltage; charge collection; hardened cells; multiple-node upset (MNU); parasitic bipolar conduction;
Conference_Titel :
INC, IMS and IDC, 2009. NCM '09. Fifth International Joint Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-5209-5
Electronic_ISBN :
978-0-7695-3769-6
DOI :
10.1109/NCM.2009.121
