3D Simulation of Charge Collection and MNU in Highly-Scaled SRAM Design

Author

Lin, Liu ; Yuanfu, Zhao ; Suge, Yue

Author_Institution

Design Dept., Beijing Microelectron. Technol. Inst., Beijing, China

fYear

2009

fDate

25-27 Aug. 2009

Firstpage

242

Lastpage

246

Abstract

Three-dimensional simulation is used to explore the new charge-collection mechanisms in highly-scaled MOSEFT. The results show the charge collection with the parasitic bipolar conduction can cause an increased SEU sensitivity. Then the problem of multiple-node upset in a 0.18 mum DICE cell is studied .The results show not only the transient floating node and charge lateral diffusion are the key reasons for MNU, and the new charge-collection mechanisms in highly-scaled circuit become another reason.

Keywords

MOSFET; SRAM chips; bipolar memory circuits; 3D simulation; DICE cell; MOSEFT; SEU sensitivity; SRAM design; charge lateral diffusion; charge-collection mechanisms; multiple-node upset; parasitic bipolar conduction; size 0.18 mum; transient floating node; Argon; Circuit simulation; Latches; MOS devices; MOSFET circuits; Microelectronics; Radiation hardening; Random access memory; Resistors; Voltage; charge collection; hardened cells; multiple-node upset (MNU); parasitic bipolar conduction;

fLanguage

English

Publisher

ieee

Conference_Titel

INC, IMS and IDC, 2009. NCM '09. Fifth International Joint Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-5209-5

Electronic_ISBN

978-0-7695-3769-6

Type

conf

DOI

10.1109/NCM.2009.121

Filename

5331720