Title :
Power silicon carbide devices based on Lely grown substrates
Author :
Lebedev, A.A. ; Andreev, A.N. ; Anikin, M.M. ; Rastegaeva, M.G. ; Savkina, N.S. ; Strelchuk, A.M. ; Syrkin, A.L. ; Tregubova, A.S. ; Chelnokov, V.E.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
This paper presents some experimental data relating to SiC devices based on substrates grown by the Lely method. These devices were developed on p- and n-type epilayers grown by the method of sublimation on the (0001)Si plane of the substrates. Investigation of devices parameters in the wide temperature region of 300-800 K were made. In these devices, parameters and concentration of deep centers and there influence on the processes of radiationless recombination have been investigated
Keywords :
deep levels; electron-hole recombination; power semiconductor devices; semiconductor growth; silicon compounds; solid-state rectifiers; sublimation; substrates; vapour phase epitaxial growth; wide band gap semiconductors; (0001)Si plane; 300 to 800 K; Lely grown substrates; Lely growth method; Si; SiC; deep centres concentration; n-type epilayers; p-type epilayers; power SiC devices; radiationless recombination; sublimation; Crystals; Dry etching; Photonic band gap; Plasma applications; Reflection; Silicon carbide; Spontaneous emission; Substrates; Surface topography; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515015
