Efficient power Schottky rectifiers of 4H-SiC

Author

Itoh, A. ; Kimoto, T. ; Matsunami, H.

Author_Institution

Dept. of Electr. Eng., Kyoto Univ., Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

101

Lastpage

106

Abstract

Efficient high-voltage 4H-SiC Schottky rectifiers were fabricated. These devices showed very low specific on-resistances (1.0-2.0×10 ^-3 Ω cm²) with high breakdown voltages of ~800 V. Selecting an optimum barrier hight, 4H-SiC Schottky rectifiers operated with low forward voltage drops and low reverse leakage currents, which lead to a reduction of power losses. Utilizing Ti (φ _B:1.0~1.2 V) as a Schottky metal, an efficient 4H-SiC power Schottky rectifiers with low losses could be realized

Keywords

Schottky diodes; electric breakdown; leakage currents; losses; power semiconductor diodes; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 800 V; HV 4H-SiC Schottky rectifiers; Ti Schottky metal; Ti-SiC; high breakdown voltages; high-voltage Schottky rectifiers; low forward voltage drops; low reverse leakage currents; low specific on-resistances; optimum barrier hight; power Schottky rectifiers; power losses reduction; Breakdown voltage; Electron mobility; Gold; Implants; Low voltage; Rectifiers; Schottky barriers; Semiconductor materials; Silicon carbide; Termination of employment;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515017

Filename

515017