Al/Ti Schottky barrier diodes with the guard-ring termination for 6H-SiC

Author

Ueno, Katsunori ; Urushidani, Tatsuo ; Hashimoto, Kouichi ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

107

Lastpage

111

Abstract

In this report, three important technologies for SiC power devices are studied. One is the isolation technology for a p-n junction utilizing the local oxidation technique. For the second, Al/Ti is investigated as a Schottky metal, in which wet etching and the high temperature annealing are applicable. Finally, we propose a guard-ring structure as the edge termination for Schottky barrier diodes to sustain high voltage. The mesa structure of the guard ring is fabricated by local oxidation. The fabrication results showed that the guard-ring structure has improved the breakdown voltage to as high as p-n junction diodes

Keywords

Schottky diodes; aluminium alloys; annealing; etching; isolation technology; oxidation; power semiconductor diodes; silicon compounds; titanium alloys; wide band gap semiconductors; 6H-SiC; Al-Ti Schottky metal; AlTi-SiC; Schottky barrier diodes; SiC power devices; breakdown voltage; edge termination; fabrication; guard-ring termination; high temperature annealing; isolation technology; local oxidation technique; mesa structure; p-n junction; wet etching; Annealing; Isolation technology; Oxidation; P-n junctions; Schottky barriers; Schottky diodes; Silicon carbide; Temperature; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515018

Filename

515018