Title :
A high frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V
Author :
Ohguro, T. ; Saito, M. ; Endo, K. ; Kakumoto, M. ; Yoshitomi, T. ; Ono, M. ; Momose, H.S. ; Iwai, H.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
High frequency silicon power n-MOSFETs with 0.35 μm gate length were fabricated. The symmetrical LDD structure was adopted for its source and drain junctions. Record high fT, 8.3 GHz, and fmax, 6.0 GHz, were obtained at 3.5 V supply voltage. High breakdown voltage of 13 V was achieved concurrently due to the optimizations of the process and devices parameters. The efficiency of output power for the 900 M~2.0 GHz operation was also discussed
Keywords :
UHF field effect transistors; power MOSFET; power field effect transistors; silicon; 0.35 micron; 13 V; 3.5 V; 6.0 GHz; 8.3 GHz; 900 MHz to 2.0 GHz; Si; breakdown voltage; gate length; high frequency power silicon NMOSFET; output power efficiency; symmetrical LDD structure; Acceleration; Electrodes; Erbium; Frequency; Ion implantation; MOSFET circuits; Oxidation; Silicon; Thermal degradation; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515019
