Title :
New MOS-gate controlled thyristor (MGCT)
Author :
Ajit, J.S. ; Kinzer, D.M.
Author_Institution :
Adv. Product Dev., Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
A new three-terminal power device structure called the MOS-Gate Controlled Thyristor (MGCT) is described. The device consists of a thyristor structure with the thyristor current constrained to flow via the channel region of an enhancement-mode MOSFET. This allows limiting of the thyristor current by the MOSFET. The new structure does not have any parasitic thyristor structure. Multi-cell MGCT devices fabricated along with IGBT devices on the same wafer showed about 20% improvement in on-state voltage drop over IGBT for 750 V devices
Keywords :
MOS-controlled thyristors; power MOSFET; thyristors; 750 V; MOS-gate controlled thyristor; enhancement-mode MOSFET; multi-cell MGCT devices; on-state voltage drop; three-terminal power device; Breakdown voltage; Current density; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power MOSFET; Product development; Rectifiers; Telephony; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515021
