DocumentCode
2365786
Title
New MOS-gate controlled thyristor (MGCT)
Author
Ajit, J.S. ; Kinzer, D.M.
Author_Institution
Adv. Product Dev., Int. Rectifier Corp., El Segundo, CA, USA
fYear
1995
fDate
23-25 May 1995
Firstpage
123
Lastpage
128
Abstract
A new three-terminal power device structure called the MOS-Gate Controlled Thyristor (MGCT) is described. The device consists of a thyristor structure with the thyristor current constrained to flow via the channel region of an enhancement-mode MOSFET. This allows limiting of the thyristor current by the MOSFET. The new structure does not have any parasitic thyristor structure. Multi-cell MGCT devices fabricated along with IGBT devices on the same wafer showed about 20% improvement in on-state voltage drop over IGBT for 750 V devices
Keywords
MOS-controlled thyristors; power MOSFET; thyristors; 750 V; MOS-gate controlled thyristor; enhancement-mode MOSFET; multi-cell MGCT devices; on-state voltage drop; three-terminal power device; Breakdown voltage; Current density; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power MOSFET; Product development; Rectifiers; Telephony; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515021
Filename
515021
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