Title :
Tunneling in thin SOI high voltage devices
Author :
Merchant, S. ; Arnold, E. ; Simpson, M.
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
Abstract :
Tunneling of electrons from valence to conduction band in thin SOI high voltage devices is reported for the first time. A close correlation between the theoretical and experimental reverse leakage current in 600-700 V thin SOI diodes is shown, including buried oxide thickness dependence, substrate bias dependence, and temperature dependence. Band-to-band tunneling is also verified with numerical simulation
Keywords :
leakage currents; power semiconductor diodes; silicon-on-insulator; tunnelling; 600 to 700 V; SOI diodes; band-to-band tunneling; buried oxide; conduction band; electron tunneling; high voltage devices; leakage current; numerical simulation; valence band; Avalanche breakdown; Breakdown voltage; Diodes; Electric breakdown; Electrons; Leakage current; Numerical simulation; Silicon; Temperature dependence; Tunneling;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515022
