DocumentCode :
2365814
Title :
Ion-sensitive field-effect transistor selectivity with back-propagation neural network
Author :
Abdullah, Wan Fazlida Hanim ; Othman, Masuri ; Ali, Mohd Alaudin Mohd ; Islam, Md Shabiul
Author_Institution :
Fakulti Kejuruteraan Elektrik, Univ. Teknol. MARA, Shah Alam, Malaysia
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
314
Lastpage :
317
Abstract :
The ion-sensitive field-effect transistor (ISFET) produces voltage signals, in a similar manner to the metal-oxide field-effect transistor, sensitive to ionic concentration change. When immersed in ionic solution with mixed ions of similar chemical characteristics, ISFETs respond with deceptive voltage signals due to the interfering ion contribution over the main ion of interest. In this paper, we applied back-propagation neural network to data acquired from titration of potassium ion (K+) and ammonium ion (NH4+). The role of the post-processing is to extract main ionic concentration level in the presence of an interfering ion. Primary data from measured observations with actual device variation and background ion was fed to a feedforward multilayer perceptron trained with several methods of back-propagation. Results show that neural network trained with backpropagation algorithm is able to improve concentration information by gives 15% improvement with 4 sensor array compared to direct estimation without post-processing. Additionally, averaging from multiple classifiers is shown to give a further 5% improvement on the regression factor between output and targeted values.
Keywords :
ion sensitive field effect transistors; neural nets; ammonium ion titration; back-propagation neural network; ion-sensitive field-effect transistor selectivity; ionic concentration change; potassium ion titration; Arrays; Artificial neural networks; Estimation; Ions; Neurons; Training data; Transistors; MOSFET sensor array; electrochemical devices; microsensors; selectivity; supervised learning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
Conference_Location :
Kuala Lumpur
ISSN :
2159-2047
Print_ISBN :
978-1-61284-388-9
Type :
conf
DOI :
10.1109/ICEDSA.2011.5959093
Filename :
5959093
Link To Document :
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