• DocumentCode
    2365814
  • Title

    Ion-sensitive field-effect transistor selectivity with back-propagation neural network

  • Author

    Abdullah, Wan Fazlida Hanim ; Othman, Masuri ; Ali, Mohd Alaudin Mohd ; Islam, Md Shabiul

  • Author_Institution
    Fakulti Kejuruteraan Elektrik, Univ. Teknol. MARA, Shah Alam, Malaysia
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    314
  • Lastpage
    317
  • Abstract
    The ion-sensitive field-effect transistor (ISFET) produces voltage signals, in a similar manner to the metal-oxide field-effect transistor, sensitive to ionic concentration change. When immersed in ionic solution with mixed ions of similar chemical characteristics, ISFETs respond with deceptive voltage signals due to the interfering ion contribution over the main ion of interest. In this paper, we applied back-propagation neural network to data acquired from titration of potassium ion (K+) and ammonium ion (NH4+). The role of the post-processing is to extract main ionic concentration level in the presence of an interfering ion. Primary data from measured observations with actual device variation and background ion was fed to a feedforward multilayer perceptron trained with several methods of back-propagation. Results show that neural network trained with backpropagation algorithm is able to improve concentration information by gives 15% improvement with 4 sensor array compared to direct estimation without post-processing. Additionally, averaging from multiple classifiers is shown to give a further 5% improvement on the regression factor between output and targeted values.
  • Keywords
    ion sensitive field effect transistors; neural nets; ammonium ion titration; back-propagation neural network; ion-sensitive field-effect transistor selectivity; ionic concentration change; potassium ion titration; Arrays; Artificial neural networks; Estimation; Ions; Neurons; Training data; Transistors; MOSFET sensor array; electrochemical devices; microsensors; selectivity; supervised learning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
  • Conference_Location
    Kuala Lumpur
  • ISSN
    2159-2047
  • Print_ISBN
    978-1-61284-388-9
  • Type

    conf

  • DOI
    10.1109/ICEDSA.2011.5959093
  • Filename
    5959093