Title :
800 V GaAs MESFET for power switching applications
Author :
Wright, N.G. ; Johnson, C.M. ; Neill, A. G O ; Hossin, M. ; Gwilliam, R.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
Abstract :
A technologically feasible solution to the need for high-speed power switching devices is presented. The paper details the design of a new GaAs MESFET device capable of operation at voltages up to 800 V, currents up to 10 A and switching frequencies in excess of 10 MHz
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; power MESFET; power field effect transistors; power semiconductor switches; 10 A; 10 MHz; 800 V; GaAs; MESFET; high-speed power switching device; Gallium arsenide; Geometry; MESFETs; Power engineering and energy; Power semiconductor switches; Pulse width modulation; Silicon devices; Substrates; Telephony; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515025
