Optical gain of segregated GaInNAs/GaAs quantum wells at emission wavelength of 1.3 micron

The band structure and optical gain spectra of indium segregated Ga_0.628In_0.372N_0.015As_0.985/GaAs single quantum well (Qw) have been studied theoretically using 10-band k middot p Hamiltonian. The optical gains of the TE and TM modes are calculated by employing the many-body optical gain model. The subbands and the optical gains of the GaInNAs/GaAs QW have been investigated for various segregation coefficients. It is found that the indium segregation tends to reduce the subband coupling. When the segregation coefficient R is smaller than 0.75, the gain maximum of the TE mode decreases as a function of R, however, it turns to increase when R is larger than 0.75. On the other hand, the gain maximum of the TM mode shows a monolithic increase with the increase of R. For R < 0.6, the effects of indium segregation on the optical gain of both the TE and TM modes are minor. These results may be useful when designing GaInNAs/GaAs QW based lasers.