• DocumentCode
    2365879
  • Title

    Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers

  • Author

    Kelemen, M.T. ; Weber, J. ; Rogg, J. ; Rinner, F. ; Mikulla, M. ; Weimann, G.

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    Summary form only given. In order to optimize the brightness of these diode lasers, the dependence of the linewidth enhancement factor and of the beam quality on the device structure parameters was investigated. The active In0.12Ga0.88As quantum well with a thickness of 7 nm is embedded in Al0.2Ga0.8As waveguides and Al0.4Ga0.6As cladding layers.
  • Keywords
    III-V semiconductors; brightness; gallium arsenide; indium compounds; laser beams; quantum well lasers; ridge waveguides; spectral line breadth; waveguide lasers; Al0.2Ga0.8As; Al0.4Ga0.6As; Al0.4Ga0.6As cladding layers; Al0.2Ga0.8As waveguides; In0.12Ga0.88As; active In0.12Ga0.88As quantum well; beam quality; brightness; device structure parameters; diode lasers; linewidth enhancement factor; ridge-waveguide tapered diode lasers; Brightness; Copper; Diode lasers; Heat sinks; Laser beams; Optical device fabrication; Power generation; Quantum well lasers; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2002. IEEE 18th International
  • Print_ISBN
    0-7803-7598-X
  • Type

    conf

  • DOI
    10.1109/ISLC.2002.1041128
  • Filename
    1041128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365879