Title :
Photoresponse characteristics of nanostructured aluminum doped Zinc oxide thin films
Author :
Malek, M.F. ; Arbain, S.A. ; Mamat, M.H. ; Sahdan, M.Z. ; Musa, M.Z. ; Khusaimi, Z. ; Rusop, M. ; Rodzi, A.S.
Author_Institution :
NANO-Electron. Centre, Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
Aluminium doped Zinc oxide (ZnO) thin films were prepared through sol gel dip coating technique with various doping concentrations from 0 to 1.5 at.%. The thin films were characterized using X-ray Diffractometer (XRD), Field Emission Scanning Electron Microscope (FESEM), UV-Vis-NIR spectrophotometer and current voltage (I-V) measurement system. From the XRD analysis, increasing of doping concentration affected structural properties of the thin film where c-axis orientation becomes weaker. FESEM shows a homogenous thin films in nanoscale while the UV-Vis-NIR spectra reveals all films exhibit high transmission (>;80 %) in UV-NIR region. Improvement in electrical properties with dopant concentrations is observed as shown by I-V measurement results. The lowest dark resistivity obtained was 1.44 Ω.cm, while the lowest resistivity under light illumination was 1.05 Ω.cm at 1 at.% of Al doping.
Keywords :
II-VI semiconductors; X-ray diffraction; aluminium; dark conductivity; dip coating; doping profiles; electrical resistivity; field emission electron microscopy; infrared spectra; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor doping; semiconductor growth; semiconductor thin films; sol-gel processing; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; FESEM analysis; UV-Vis-NIR spectrophotometer; X-ray diffractometer; XRD analysis; ZnO:Al; current voltage measurement system; dark resistivity; doping concentration; electrical properties; field emission scanning electron microscopy; nanostructured aluminum doped zinc oxide thin films; sol gel dip coating technique; structural properties; Conductivity; Current measurement; Doping; Films; X-ray scattering; Zinc oxide; Al Doped ZnO; Doping Concentration; FESEM; I–V Measurement; Sol-Gel Dip-Coating; XRD;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-61284-388-9
DOI :
10.1109/ICEDSA.2011.5959097
