• DocumentCode
    2365887
  • Title

    Analysis of 4500 V double trench MOS controlled thyristor

  • Author

    Huang, Alex Q. ; Amaratunga, Gehan ; Chen, Dan Y.

  • Author_Institution
    Virginia Power Electron. Centre, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    153
  • Lastpage
    158
  • Abstract
    Novel high voltage MOS controlled thyristor (MCT) structures are proposed and analysed. It was found that the double trench MCT(DTMCT) increases the turn-off capability by a factor of 4 and reduces the turn-off loss by a factor of 5 compared with single trench gate MCT(TMCT) while both have a forward blocking voltage of 4500 V. These results, combined with the excellent forward current carrying capability provided by thyristor operation, are encouraging for the DTMCT to be developed for very high voltage low loss applications
  • Keywords
    MOS-controlled thyristors; 4500 V; double trench MOS controlled thyristor; forward blocking voltage; high voltage DTMCT; turn-off loss; Conductivity; Current density; Insulated gate bipolar transistors; Low voltage; MOSFETs; Power electronics; Power engineering and energy; Semiconductor optical amplifiers; Switches; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
  • Conference_Location
    Yokohama
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-2618-0
  • Type

    conf

  • DOI
    10.1109/ISPSD.1995.515026
  • Filename
    515026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365887