Title :
Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure
Author :
Jin, S.R. ; Sweeney, S.J. ; Knowles, G. ; Adams, A.R. ; Higashi, T. ; Riechert, H. ; Thijs, P.J.A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 μm lasers is compared. For the first time we measure spontaneous emission at high pressure.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion recombination; laser transitions; quantum well lasers; spontaneous emission; 1.3 micron; AlGaInAs; GaInNAs; InGaAsP; carrier-recombination; high pressure; hydrostatic pressure; lasing-energy dependence; quantum-well lasers; recombination processes; spontaneous emission measurement; Current measurement; Fiber lasers; Gain measurement; Pressure measurement; Quantum well lasers; Radiative recombination; Spontaneous emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041129
