• DocumentCode
    2365895
  • Title

    Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure

  • Author

    Jin, S.R. ; Sweeney, S.J. ; Knowles, G. ; Adams, A.R. ; Higashi, T. ; Riechert, H. ; Thijs, P.J.A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 μm lasers is compared. For the first time we measure spontaneous emission at high pressure.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion recombination; laser transitions; quantum well lasers; spontaneous emission; 1.3 micron; AlGaInAs; GaInNAs; InGaAsP; carrier-recombination; high pressure; hydrostatic pressure; lasing-energy dependence; quantum-well lasers; recombination processes; spontaneous emission measurement; Current measurement; Fiber lasers; Gain measurement; Pressure measurement; Quantum well lasers; Radiative recombination; Spontaneous emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2002. IEEE 18th International
  • Print_ISBN
    0-7803-7598-X
  • Type

    conf

  • DOI
    10.1109/ISLC.2002.1041129
  • Filename
    1041129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2365895