Effects of cobalt doping concentration on the structural, electrical, and optical properties of titanium dioxide thin films

Author

Musa, M.Z. ; Ameran, Z.F. ; Mamat, M.H. ; Malek, M.F. ; Rasheid, N.A. ; Noor, U.M. ; Rusop, M.

Author_Institution

NANO Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia

fYear

2011

fDate

25-27 April 2011

Firstpage

339

Lastpage

342

Abstract

Cobalt-doped titanium dioxide thin films have been successfully deposited using sol-gel spin coating technique. The doping process has been done by mixing cobalt source into TiO₂ sol-gel. The doping concentration has been varied and its effects to the structural, electrical, and optical properties of the thin films have been studied. Reduction in electrical resistivity is observed with the increase of cobalt doping concentration. Higher cobalt doping concentration sample also shows a shift of absorption edge to longer wavelength which is a desired characteristic for application in optoelectronic devices.

Keywords

cobalt; doping profiles; electrical resistivity; mixing; semiconductor doping; semiconductor materials; semiconductor thin films; sol-gel processing; spin coating; titanium compounds; ultraviolet spectra; visible spectra; TiO₂:Co; absorption edge; cobalt doping concentration; electrical properties; electrical resistivity; mixing; optical properties; optoelectronic devices; semiconductor materials; sol-gel spin coating; structural properties; titanium dioxide thin films; ultraviolet-visible spectra; Cobalt; Contacts; Doping; Rough surfaces; Surface roughness; Titanium; Cobalt nitrate; Doping concentration; Sol-gel; Spin coating technique; Titanium dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on

Conference_Location

Kuala Lumpur

ISSN

2159-2047

Print_ISBN

978-1-61284-388-9

Type

conf

DOI

10.1109/ICEDSA.2011.5959098

Filename

5959098