Title :
ICBRT-an isolated channel base resistance controlled thyristor
Author :
Parthasarathy, V. ; Bhalla, A. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A novel 550 V MOS-gated thyristor structure called the Isolated Channel Base Resistance Controlled Thyristor (ICBRT) is proposed in this paper. This new structure incorporates a p+ diffusion adjacent to the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in the ICBRT along with separate turn-on and turn-off gates. A 70% improvement in the maximum controllable current density is predicted in numerical analysis and is confirmed by experimental measurements. This improvement is obtained with no sacrifice in device characteristics or process complexity
Keywords :
MOS-controlled thyristors; 550 V; ICBRT; MOS-gated thyristor; current density; isolated channel base resistance controlled thyristor; p+ diffusion; turn-off; turn-on; Current density; Current measurement; Density measurement; Doping; Electrons; Implants; Insulated gate bipolar transistors; Numerical analysis; Pulp manufacturing; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515028
