Analysis and optimization of high-power GaN lasers

Author

Piprek, Joachim ; Nakamura, Shuji

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2002

fDate

2002

Firstpage

87

Lastpage

88

Abstract

Summary form only given. 400 nm Fabry-Perot laser diodes are investigated that exhibit the highest output power measured thus far (420 mW). The active region includes two InGaN quantum wells, an AlGaN electron stopper layer, GaN waveguide layers, and superlattice cladding layers. Advanced laser simulation is used to analyze internal physical processes, to reveal performance limitations, and to explore optimization options. The laser model self-consistently combines 6x6 k.p band structure and gain calculations with two-dimensional simulations of wave guiding, carrier transport, and heat flux.

Keywords

III-V semiconductors; gallium compounds; indium compounds; k.p calculations; laser theory; laser transitions; optimisation; quantum well lasers; semiconductor device models; semiconductor superlattices; waveguide lasers; 400 nm; 400 nm Fabry-Perot laser diodes; 420 mW; 6x6 k.p band structure; AlGaN; AlGaN electron stopper layer; GaN; GaN waveguide layers; InGaN; InGaN quantum well lasers; active region; carrier transport; gain calculations; heat flux; high-power GaN lasers; internal physical processes; laser model; laser simulation; optimization options; output power; performance limitations; superlattice cladding layers; Aluminum gallium nitride; Diode lasers; Fabry-Perot; Gallium nitride; Laser modes; Laser theory; Power generation; Power measurement; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041131

Filename

1041131