Comparison of linear and circular cell dual channel emitter switched thyristors

Author

Sridhar, S. ; Baliga, B.J.

Author_Institution

Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

170

Lastpage

174

Abstract

The total on-state voltage drop in a Dual Channel Emitter Switched Thyristor (DC-EST) is a function of the MOS channel density and the thyristor area. In this paper, it is demonstrated that the total on-state voltage drop has a minimum value at an optimum floating N+ emitter size. The minimum in the total on-state voltage drop was experimentally verified for both linear and circular cell DC-ESTs in excellent agreement with analytical predictions. The optimum floating emitter size was found to depend on the lifetime and the operating temperature. The minimum value of the total on-state voltage drop for the linear DC-EST was found to be lower than that for the circular design. However, for the optimum floating emitter size, the circular design has a higher maximum controllable current density than the linear design

Keywords

MOS-controlled thyristors; DC-EST; MOS channel density; circular cell; dual channel emitter switched thyristors; floating N+ emitter; lifetime; linear cell; on-state voltage drop; operating temperature; Anodes; Cathodes; Current density; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor switches; Size control; Temperature dependence; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515029

Filename

515029