Title :
8 kV/3.6 kA light triggered thyristor
Author :
Nakagawa, T. ; Satoh, K. ; Yamamoto, M. ; Hirasawa, K. ; Ohta, K.
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
We have developed a light triggered thyristor with the blocking voltage of 8 kV and the average current of 3.6 kA by using a 6 inch FZ Si wafer and adopting new design techniques. The new multidynamic gate structure achieved a high di/dt capability at the rating voltage. The new arrangement of pilot thyristors made the dv/dt capability high. Additionally, optimizing the new local lifetime control technology by proton irradiation improved the trade-off relationship between the on-state voltage and the reverse-recovered charge
Keywords :
photothyristors; proton effects; 3.6 kA; 8 kV; FZ Si wafer; Si; light triggered thyristor; local lifetime control; multidynamic gate; on-state voltage; proton irradiation; reverse-recovered charge; Cathodes; Circuits; HVDC transmission; Leakage current; Lighting control; Packaging; Protons; Switches; Thyristors; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515030
