Title :
Development of QHR arrays in NIM
Author :
Zhong Qing ; Wang Xueshen ; Li Jinjin ; Li Zhun ; Kang Lei
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
Abstract :
We report the fabrication and measurement of quantum Hall (QH) array devices based on GaAs/AlGaAs heterostructure in NIM. Three QH arrays, namely 2 Hall bars in series, 2 Hall bars in parallel, and 4 Hall bars in series are demonstrated. The low resolution preliminary measurement results are presented. The present resolution is limited by the measurement equipment and environment.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; two-dimensional electron gas; GaAs-AlGaAs; Hall bars; quantum Hall array devices; quantum Hall array resistance standards; quantum Hall effect; Bars; Electrical resistance measurement; Fabrication; Gallium arsenide; Insulation; Resistance; Wires; Quantum Hall effect (QHE); quantum Hall array resistance devices (QHAR); quantum Hall array resistance standards (QHARS);
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898573
