High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis

Author

Borruel, L. ; Sujecki, S. ; Auzanneau, S.C. ; Sumpf, B. ; Moreno, P. ; Wykes, J. ; Krakowski, M. ; Erbert, Gotz ; Rodriguez, D. ; Sewell, Phillip ; Calligaro, M. ; Wenzel, H. ; Benson, T.M. ; Larkins, E.C. ; Esquivias, I.

Author_Institution

Dpto.Tecnol. Fotonica, Univ. Politecnica de Madrid, Spain

fYear

2002

fDate

2002

Firstpage

89

Lastpage

90

Abstract

The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.

Keywords

brightness; laser beams; laser cavity resonators; laser theory; laser transitions; quantum well lasers; semiconductor device models; 732 nm; 732 nm laser structure; 975 nm; Al-free optical cavity; AlGaAs; AlGaAs cladding regions; AlGaAs confinement regions; GaAsP; beam quality; fast axis divergence; filamentation; geometries; high brightness tapered lasers; high power levels; large optical cavity; modal filtering; numerical analysis; self-focusing; spatial hole burning; strained InGaAs QW; tensile strained GaAsP QW laser; thermal lensing; vertical confinement factor; Brightness; Fiber lasers; Geometrical optics; Laser beams; Numerical analysis; Optical refraction; Optical resonators; Optical variables control; Power lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041132

Filename

1041132