Title :
A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)
Author :
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The model accounts for the enhanced carrier modulation in the drift base due to the PIN diode effect. The on-state phenomena in the TIGBT are accurately described using numerical simulations and analytical modeling. The PIN diode effect has a very important role in reducing the on-state forward voltage with virtually no compromise in the turn-off performance. It is concluded that the TIGBT is the most promising power structure in the area of high voltage or/and fast switching devices
Keywords :
equivalent circuits; insulated gate bipolar transistors; p-i-n diodes; power semiconductor switches; power transistors; semiconductor device models; PIN diode effect; carrier dynamics; drift base; enhanced carrier modulation; fast switching devices; insulated gate bipolar transistors; numerical simulations; on-state forward voltage; power structure; trench IGBT; unified analytical model; Analytical models; Anodes; Cathodes; Doping; Equivalent circuits; Insulated gate bipolar transistors; Numerical models; Numerical simulation; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515033
