Title :
Carbon nanotubes synthesized by simple thermal chemical vapor deposition and their electrical properties
Author :
Zou, X.P. ; Abe, H. ; Shimizu, T. ; Endo, A. ; Tokumoto, H. ; Zhu, S.M. ; Zhou, H.S.
Author_Institution :
Beijing Key Lab. for Sensor, Beijing Inf. Technol. Inst., Beijing
Abstract :
A simple thermal chemical vapor deposition growth technique of multi-walled carbon nanotubes is present. Aligned carbon nanotube arrays on Fe2O3/ SiO2/Si substrates, carbon nanotube film on Pt metal grid substrates, and straight carbon nanotubes on Mo-Fe/silica substrates have been synthesized at lower reaction temperature at atmospheric pressure by pyrolysis of ethyl alcohol as carbon source. The as-synthesized carbon nanotubes were characterized by both scanning electron microscopy and high-resolution transmission electron microscopy. The electrical property measurements of individual multi-walled carbon nanotube grown on Fe2O3/ SiO2/Si silicon substrate and Pt metal grid substrate were performed by homemade dasianano-manipulatorpsila. According to Current-Voltage curves obtained in our experiments, we could calculate the current density that the multi-walled carbon nanotubes could carry is about 107A/cm2, which is much larger than that of normal metals.
Keywords :
carbon nanotubes; chemical vapour deposition; current density; iron compounds; nanotechnology; pyrolysis; scanning electron microscopy; silicon; silicon compounds; transmission electron microscopy; C; Fe2O3-SiO2-Si; Pt; carbon source; current density; current-voltage curves; ethyl alcohol; high-resolution transmission electron microscopy; metal grid substrates; multiwalled carbon nanotubes; pyrolysis; scanning electron microscopy; thermal chemical vapor deposition; Atmospheric measurements; Carbon nanotubes; Chemical vapor deposition; Iron; Scanning electron microscopy; Semiconductor films; Silicon compounds; Substrates; Temperature; Transmission electron microscopy;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585477