Title :
Performance of LIGBTs built on SIMOX substrates using double epitaxial layer dielectric isolation technology
Author :
Narayanan, E. M Sankara ; Amaratunga, G.
Author_Institution :
Emerging Technol. Centre, De Monfort Univ., Leicester, UK
Abstract :
In this paper, the measured characteristics of lateral power devices fabricated using the novel double epitaxial layer dielectric isolation (DELDI) technology is presented for the first time. The results show enhanced breakdown and on-state performance of lateral insulated gate bipolar transistors (LIGBTs) in DELDI technology in comparison to conventional SOI based structures
Keywords :
SIMOX; electric breakdown; insulated gate bipolar transistors; isolation technology; power transistors; DELDI technology; LIGBTs; SIMOX substrates; Si; breakdown; double epitaxial layer dielectric isolation; insulated gate bipolar transistors; lateral IGBT; lateral power devices; on-state performance; Dielectric devices; Dielectric substrates; Epitaxial layers; Fabrication; Insulation; Integrated circuit technology; Isolation technology; Silicon on insulator technology; Tellurium; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515038
