Title :
On-state and short circuit behaviour of high voltage trench gate IGBTs in comparison with planar IGBTs
Author :
Hotz, R. ; Bauer, F. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The impact of the cathode geometry on conduction and switching properties of high voltage trench gate IGBTs is analysed using mixed mode two-dimensional device and circuit simulation tools. The most effective means to minimize conduction losses by injection enhancement at the cathode is the reduction of the width of the mesa containing n + electron emitters and the MOS channel regions. As compared to planar IGBTs, the improvement is most pronounced at higher operating temperatures. If low short circuit current densities are of concern, optimized trench gate geometries also require wide trenches. Trading off conduction losses against turn-off losses, trench gate IGBTs generate approximately 30 to 40% less turn-off losses as planar IGBTs with identical on-state voltage
Keywords :
insulated gate bipolar transistors; losses; power transistors; semiconductor device models; HV trench gate IGBTs; MOS channel region; cathode geometry; conduction losses; conduction properties; high voltage IGBT; injection enhancement; mixed mode 2D device simulation; onstate behaviour; optimized trench gate geometries; planar IGBTs; short circuit behaviour; switching properties; turnoff losses; Cathodes; Current density; Fingers; Geometry; Insulated gate bipolar transistors; MOSFETs; Short circuit currents; Switching circuits; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515039
