Particle emission from W-10Ti sputtering targets

Author

Wickersham, C.E., Jr. ; Poole, J.E. ; Mueller, J.J.

Author_Institution

TOSOH SMD Inc., Grove City, OH, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

82

Lastpage

88

Abstract

Particle emission from W-Ti sputtering targets is shown to depend upon the amount of β(Ti,W) in the target. Particle densities were measured on 125 mm diameter silicon wafers after deposition of 220 nm thick W-Ti films. Measured particle densities decreased from around 1 particle/cm² to less than 0.1 particle/cm² as the sputtering target microstructure changed from single phase β(Ti,W) to a two phase combination of β-W and α-Ti. W-Ti target microstructure control was achieved by controlling the target temperature during target processing. Lower target processing temperatures result in less W-Ti interdiffusion and the formation of less β(Ti,W). Hot isostatic pressing was used to consolidate W-10Ti material to near 100% density with low temperature. The authors propose that the mechanism for particle emission from W-Ti sputtering targets is the compressive stress fracture of the Ti rich β(Ti,W) phase

Keywords

fracture; internal stresses; sputter deposition; titanium alloys; tungsten alloys; β(Ti,W) phase; W-Ti interdiffusion; W-Ti sputtering targets; compressive stress fracture; hot isostatic pressing; particle emission; target microstructure; target processing temperatures; Density measurement; Microstructure; Particle measurements; Phase measurement; Pressing; Semiconductor films; Silicon; Sputtering; Temperature control; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.152970

Filename

152970