Title :
Theoretical and experimental investigation of 500 V p- and n-channel VDMOS-LIGBT transistors
Author :
Arthasarathy, V.F. ; Chow, T.P.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Static and dynamic performance of the n-channel VDMOS-LIGBT, presented for the first time in this work, has been studied as a function of a few critical design parameters. A novel method for minimizing snap-back in this device and other similar hybrid devices is described. A unique back-injection of current out of the IGBT anode of the n-channel VDMOS-LIGBT during resistive turn-off has been observed experimentally and is elucidated using numerical simulations
Keywords :
insulated gate bipolar transistors; power MOSFET; 500 V; VDMOS-LIGBT transistors; back current injection; dynamic performance; hybrid devices; n-channel devices; numerical simulation; p-channel devices; resistive turn-off; snap-back; static performance; Anodes; Conductivity; Insulated gate bipolar transistors; MOSFET circuits; Manufacturing; Numerical simulation; Power MOSFET; Silicon; Surface resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515042
