DocumentCode
2366196
Title
Soft Error Rates with Inertial and Logical Masking
Author
Wang, Fan ; Agrawal, Vishwani D.
Author_Institution
Juniper Networks, Inc., Sunnyvale, CA
fYear
2009
fDate
5-9 Jan. 2009
Firstpage
459
Lastpage
464
Abstract
We analyze the neutron induced soft error rate (SER). An induced error pulse is modeled by two parameters, probability of occurrence and probability density function of the pulse width. We calculate failures in time (FIT) rates for ISCAS85 benchmark circuits. A comparison with measured SER for SRAMs shows better relevance of our work over other published work. Our CPU times are reasonable; benchmark circuit C1908 with 880 gates requires only 1.14 seconds. Further, we study the influence of circuit topology on SER. We find that for some circuits with many levels of logic there exists a critical single event transient (SET) width. For smaller induced pulse width the SER depends not on the size of the circuit but only on the gates near the output, and only those need to be protected. For an inverter chain in TMSC035 technology, the critical width is between 25 ps and 50 ps. For a shallow circuit, e.g., a ripple-carry adder, the critical SET width may not exist.
Keywords
SRAM chips; network topology; radiation hardening (electronics); SRAM; circuit topology; failure-in-time rates; inertial masking; logical masking; single event transient; soft error rates; time 1.14 s; Central Processing Unit; Circuit topology; Error analysis; Logic circuits; Neutrons; Probability density function; Protection; Pulse circuits; Pulse width modulation inverters; Space vector pulse width modulation; Reliability; digital logic circuits; fault tolerance; soft error rate estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2009 22nd International Conference on
Conference_Location
New Delhi
ISSN
1063-9667
Print_ISBN
978-0-7695-3506-7
Type
conf
DOI
10.1109/VLSI.Design.2009.77
Filename
4749715
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