• DocumentCode
    2366196
  • Title

    Soft Error Rates with Inertial and Logical Masking

  • Author

    Wang, Fan ; Agrawal, Vishwani D.

  • Author_Institution
    Juniper Networks, Inc., Sunnyvale, CA
  • fYear
    2009
  • fDate
    5-9 Jan. 2009
  • Firstpage
    459
  • Lastpage
    464
  • Abstract
    We analyze the neutron induced soft error rate (SER). An induced error pulse is modeled by two parameters, probability of occurrence and probability density function of the pulse width. We calculate failures in time (FIT) rates for ISCAS85 benchmark circuits. A comparison with measured SER for SRAMs shows better relevance of our work over other published work. Our CPU times are reasonable; benchmark circuit C1908 with 880 gates requires only 1.14 seconds. Further, we study the influence of circuit topology on SER. We find that for some circuits with many levels of logic there exists a critical single event transient (SET) width. For smaller induced pulse width the SER depends not on the size of the circuit but only on the gates near the output, and only those need to be protected. For an inverter chain in TMSC035 technology, the critical width is between 25 ps and 50 ps. For a shallow circuit, e.g., a ripple-carry adder, the critical SET width may not exist.
  • Keywords
    SRAM chips; network topology; radiation hardening (electronics); SRAM; circuit topology; failure-in-time rates; inertial masking; logical masking; single event transient; soft error rates; time 1.14 s; Central Processing Unit; Circuit topology; Error analysis; Logic circuits; Neutrons; Probability density function; Protection; Pulse circuits; Pulse width modulation inverters; Space vector pulse width modulation; Reliability; digital logic circuits; fault tolerance; soft error rate estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2009 22nd International Conference on
  • Conference_Location
    New Delhi
  • ISSN
    1063-9667
  • Print_ISBN
    978-0-7695-3506-7
  • Type

    conf

  • DOI
    10.1109/VLSI.Design.2009.77
  • Filename
    4749715