Title :
Synchronous rectifiers using new structure MOSFET
Author :
Fukumochi, Yasuaki ; Suga, Ikuro ; Ono, Takashi
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
For synchronous rectifier application, a smart trenched-gate base power MOSFET has been developed. This paper describes the technology involved in developing this structure and its features. Also, experimental verification of this new MOSFET is done using it on the 2´ry side of an actual DC-DC converter application. The results are analyzed and compared with the state-of-the art Schottky barrier diode. The new trenched-gate MOSFET shows excellent performance in such application and proves to be a sure choice for elevating the overall efficiency of such power conversion systems
Keywords :
DC-DC power convertors; power MOSFET; solid-state rectifiers; DC-DC converter; power conversion efficiency; smart trenched-gate base power MOSFET; synchronous rectifier; Art; DC-DC power converters; Laboratories; MOSFET circuits; Power MOSFET; Power supplies; Rectifiers; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515044
