Title :
An improved gating technique for the synchronous rectifier MOSFETs in the forward converter topology
Author :
Xi, Y. ; Jain, P.K. ; Joós, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Abstract :
In this paper self-driven gating techniques for the synchronous rectifiers in a forward converter topology are discussed. Conventional implementations of gatings are investigated and their drawbacks are identified. An improved gating implementation is presented, which forces longer drain to source conduction of the rectifying MOSFET, protects it from excessive negative gate-source voltage stress, and has simple circuitry. A design procedure is presented and the concept is verified experimentally
Keywords :
power MOSFET; power convertors; rectifying circuits; switched mode power supplies; drain to source conduction; forward converter topology; gating technique improvement; negative gate-source voltage stress protection; self-driven gating techniques; switchmode power supplies; synchronous rectifier MOSFET; Bipolar transistors; Circuits; MOSFETs; Power transformers; Rectifiers; Schottky diodes; Stress; Switches; Topology; Voltage;
Conference_Titel :
Electrical and Computer Engineering, 1997. Engineering Innovation: Voyage of Discovery. IEEE 1997 Canadian Conference on
Conference_Location :
St. Johns, Nfld.
Print_ISBN :
0-7803-3716-6
DOI :
10.1109/CCECE.1997.608284
